Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts

材料科学 太阳能电池 多晶硅 钝化 兴奋剂 光电子学 晶体硅 化学气相沉积 纳米技术 图层(电子) 薄膜晶体管
作者
Meriç Fırat,Hariharsudan Sivaramakrishnan Radhakrishnan,María Recamán Payo,Patrick Choulat,H. M. Badran,Arvid van der Heide,Jonathan Govaerts,Filip Duerinckx,Loïc Tous,Ali Hajjiah,Jef Poortmans
出处
期刊:Solar Energy Materials and Solar Cells [Elsevier BV]
卷期号:236: 111544-111544 被引量:17
标识
DOI:10.1016/j.solmat.2021.111544
摘要

The potential of passivating contacts incorporating in situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films grown by low pressure chemical vapor deposition (LPCVD) is demonstrated in this work by integrating these layers at the rear side of large-area (241.3 cm2) bifacial n-type Tunnel Oxide Passivated Contact (n-TOPCon) solar cells with diffused front emitter and screen-printed contacts. In situ doped poly-Si films are studied as their use could simplify the production of industrial n-TOPCon solar cells compared to the common approach relying on ex situ doping of intrinsic LPCVD poly-Si films. The developed poly-Si passivating contacts exhibited excellent characteristics with low recombination current densities in passivated and screen-printing metallized regions down to 2.3 fA/cm2 and 65.8 fA/cm2, respectively, and a low contact resistivity of 2.0 mΩ⋅cm2. For reaching the best passivating contact characteristics and high solar cell efficiencies, a poly-Si film thickness of 150–200 nm was found to be optimal while a polished rear surface morphology was found to be beneficial. The best solar cell reached a certified power conversion efficiency of 23.01% along with a high open circuit voltage of 691.7 mV, enabled by the passivating contacts with the in situ doped poly-Si films. 1-cell glass-glass laminates were also fabricated with the developed solar cells, which showed no loss in their power output both upon 400 thermal cycles and after 1000 h of damp heat testing. Lastly, a roadmap is presented, indicating strategies to achieve efficiencies up to 25.5% with n-TOPCon solar cells incorporating the in situ P-doped LPCVD poly-Si films.
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