Optimization of HWCVD-grown i-a-Si:H films through synergistic adjustment of hydrogen dilution ratio and hot-wire temperature

Growth of intrinsic hydrogenated amorphous silicon (i-a-Si:H) films in silicon heterojunction solar cells employing hot-wire chemical vapor deposition (HWCVD) technology does have cost advantages, yet related studies remain insufficient. To explore the potential of this technology, we investigate the synergistic effects of hydrogen dilution ratio and hot-wire temperature on film structure, passivation, and carrier transport ability in this research. A process optimization method suitable for HWCVD technology has been developed. By identifying the optimal hydrogen dilution ratio corresponding to each hot-wire temperature, combined with the bilayer film structure deposited at low and high hot-wire temperatures, both passivation and carrier transport capability are optimized, achieving a cell efficiency improvement of 0.26%abs.