高电子迁移率晶体管
材料科学
兴奋剂
光电子学
击穿电压
阻挡层
电场
氮化镓
阈值电压
撞击电离
宽禁带半导体
图层(电子)
电压
电离
晶体管
电气工程
化学
离子
纳米技术
物理
有机化学
量子力学
工程类
作者
Kai Liu,Runhao Wang,Chong Wang,Xuefeng Zheng,Xiaohua Ma,Junchun Bai,Bin Cheng,Ruiyu Liu,Ang Li,Yaopeng Zhao,Yue Hao
标识
DOI:10.1088/1361-6641/ac643f
摘要
Abstract In this paper, the influence of lightly-doped p-GaN (p − -GaN) cap layer on the p-GaN/AlGaN/GaN HEMTs (LDP-HEMTs) was investigated. No difference in output as well as off-state breakdown characteristics but the negative shift of threshold voltage ( V TH ) are observed. The gate leakage ( V GS = 7 V) drops by 3 orders of magnitude, and the gate forward breakdown voltage and continuous operating voltage increase by 6.5 V and 2.5 V, respectively. It is worth noting that the gate characteristics are significantly optimized, which is ascribed to employment in the p−-GaN cap layer. The simulation illustrates that the electric field is dispersed, and the electric peak is alleviated by p−-GaN cap layer, thus suppressing the impact ionization and carrier injection in the high electric field. Furthermore, there is a negligible effect on the temperature reliability of V TH based on the temperature dependent characteristics in LDP-HEMTs. However, the temperature stability of gate current ( V GS = 7 V) will worsen in LDP-HEMTs due to the difference of conduction mechanism, compared with conventional p-GaN HEMTs.
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