Trench Split Gate MOSFET’s Inductive Switching

A trench split gate metal-oxide-semiconductor field-effect transistor (MOSFET) inductive switching is analyzed by adopting six-terminal method. Owing to the buried source terminal in the trench oxide, conventional three-terminal (gate, source, and drain) analysis has a limitation for investigating the detailed time-dependent current flow in the drift region, channel, as well as each terminal. However, a mixed-mode simulation tools enable us to look into the complicated current flow mechanisms in the device by dividing the gate terminal into the gate-to-source and the gate-to-drain terminals and the source terminal into the ${n} +$ , the ${p} +$ , and the shielded source terminals. The six-terminal method enables us to understand the fundamental turn-on and turn-off switching mechanisms that we have not found out so far from the measurement.