薄膜晶体管
电容
有机发光二极管
材料科学
虚假关系
光电子学
晶体管
电压
电气工程
电子工程
计算机科学
图层(电子)
物理
工程类
电极
复合材料
机器学习
量子力学
作者
Jiahao Kang,Xialing Guan,Shaowen Wang,Ze Yuan,Xiaojun Yu
摘要
This work presents a universal and comprehensive compact model for three‐ and four‐terminal thin‐film transistors (TFTs). The DC and AC behaviors of TFTs with independent bottom gate or light shield layer are modeled. A threshold‐voltage‐based capacitance model is built to meet the requirements of charge conservation and Gummel capacitance symmetry in order to illuminate spurious voltage shift and current discontinuity that are found in conventional TFT models such as RPI. Stress models are implemented in a stretched‐exponential form. In addition, a compact model for OLED is included in the build.
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