材料科学
场效应晶体管
制作
光电子学
有机半导体
半导体
电极
晶体管
有机场效应晶体管
带隙
纳米技术
电压
电气工程
替代医学
化学
物理化学
病理
工程类
医学
作者
Xiaofeng Wu,Rui Jia,Jing Pan,Jinwen Wang,Wei Deng,Pan Xiao,Xiaohong Zhang,Jiansheng Jie
标识
DOI:10.1002/adfm.202100202
摘要
Abstract Electron injection plays a crucial role in arousing the double‐slope characteristics for p‐type organic field‐effect transistors (OFETs) with narrow‐bandgap organic semiconductors (OSCs). This issue will not only result in the misrepresentation of OFET performance but also may cause device instability, hence impeding their further development in real‐world applications. A facile and highly efficient approach is developed to circumvent this issue by implementing modification on the electrode/organic semiconductor interface. An ultrathin layer of wide‐bandgap OSC with suitable energy levels is introduced to block the undesirable electron injection. By this means, typical double‐slope behaviors and bias stress stability in the p‐type OFETs can be significantly improved. Using 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl) anthradithiophene‐based OFETs the double‐slope behaviors of as‐fabricated devices are effectively converted to near‐ideal behaviors after modification, leading to a dramatic improvement of average reliability from 65.11% to 91.76%. Furthermore, the positive drift of transfer curves under prolonged bias stress is also successfully suppressed. This strategy demonstrates good universality and can provide a new guideline for the fabrication of OFETs with ideal behaviors.
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