光电效应
磁性
材料科学
兴奋剂
磁矩
带隙
金红石
磁性半导体
Atom(片上系统)
激子
热电效应
半导体
二氧化锡
氧化锡
凝聚态物理
光电子学
化学
物理
冶金
热力学
有机化学
嵌入式系统
计算机科学
标识
DOI:10.1051/e3sconf/202123701023
摘要
Tin dioxide (SnO 2 ) is a commonly known material with the rutile structure of wide band gap ntype semiconductor which is widely used like ZnO common oxide materials in daily life. But comparing with ZnO, it has a wider band gap (about 3.6 eV), and a higher exciton binding energy 130 meV. Because of its excellent optical, electrical and other excellent physical and chemical characteristics, SnO 2 has been widely adapted in thermoelectric film, gas sensor, photovoltaic devices, magnetic materials, and other related fields. A large number of theories and experiments illustrate that, after the proper doping, the remarkable improvements can be achieved. Based on the first principle, we investigated the photoelectric properties and magnetic properties when the Mn and S were doped in SnO 2 . It was shown by calculation that a Mn atom provides 1.52 μB magnetic moment and a S atom provides 0.06 μB, while O and Sn atoms rarely contribute to the system. In the system the magnetism is mainly derived from the Mn-3d electronic spin polarization.
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