太阳能电池
光电子学
材料科学
光伏系统
碲化镉光电
图层(电子)
锌
开路电压
碲锌镉
异质结
光学
电压
电气工程
纳米技术
物理
工程类
冶金
探测器
作者
Paritosh Chamola,Poornima Mittal
出处
期刊:Journal of physics
[IOP Publishing]
日期:2021-01-01
卷期号:1714 (1): 012020-012020
被引量:1
标识
DOI:10.1088/1742-6596/1714/1/012020
摘要
Abstract In present paper the ZnTe (Zinc Telluride) solar cell with heterojunction structure is developed and its electrical performance are explored. The ZnTe act as an absorber type layer, CdS (Cadmium-Sulphide) is the buffer layer and ZnO (Zinc-Oxide) is the window type layer in our solar cell. The numerical studies were done using Silvaco-Atlas which is a mathematical device-simulator. The ZnTe solar cell is simulated and various devices parameters such as open circuit voltage, fill factor etc. are extracted on different absorber-layer thickness sweeping from 0.5 to 2.5 µm keeping the thickness of other layers constant. This is followed by cutline investigation of the Zinc Telluride solar cell so as to comprehend the device’s physical science as photovoltaic cell. The solar cell is examined via a parallel (i.e. horizontal) cut-line drown inside ZnTe absorber type layer the of photovoltaic cell positioned at the junction of the absorber type and buffer type layer. The ZnTe solar cell shows good performance with 62.89% fill factor.
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