Graphene Oxide and ZnO/Al:ZnO Based Transparent Resistive Switching Devices for Memristor Applications

Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced GO (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. We have also developed a high-temperature precursor vapor mask technique using Al 2 O 3 to pattern the atomic layer deposition of ZnO and Al:ZnO layers on ZnO-based substrates. This technique was used to create a transparent memristor device based on Al:ZnO thin films having metallic and semiconducting and insulating transport properties ZnO. We demonstrated that adding combination of Al 2 O 3 and TiO 2 barrier layers improved the resistive switching behavior. The change in the resistance between the high and low-resistivity states of the memristor with a combination of Al 2 O 3 and TiO 2 was approximately 157 %.