Effect of temperature and improving the optoelectrical attributes of copper gallium sulfide (CuGaS2) thin films

This work is focused on the optimization and characterization of copper gallium sulfide (CuGaS2) thin film prepared via the spray pyrolysis route. Chalcogenides are compounds having a chalcogen anion and an electropositive element, and these thin films have more absorption coefficients. The structural, optical, electrical, and morphological properties of CuGaS2 thin films are studied using X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV-Vis-NIR Spectroscopy, and Hall effect techniques. The above characteristics are studied for both as prepared and annealed Copper Gallium Sulfide (CGS) thin films. These films have a chalcopyrite tetragonal crystal structure. It is a promising material for solar cell applications due to its suitable bandgap and good electrical stability. The results of this study provide a framework for fabricating an optimized CGS absorber layer in photovoltaic solar cells.