外延
化学气相沉积
扫描电子显微镜
材料科学
半导体
金属有机气相外延
基质(水族馆)
拉曼光谱
分析化学(期刊)
光电子学
化学
复合材料
图层(电子)
光学
地质学
物理
海洋学
色谱法
作者
Junhong Chen,Gao Min,Shangyu Yang,Siqi Zhao,Guangxuan Yan,Zhenxi Shen,Wei Zhao,Lei Wang,Xingfang Liu,Guang‐Zhen Sun,Yiping Zeng
标识
DOI:10.1016/j.jcrysgro.2022.127048
摘要
SiC is an excellent semiconductor material that can be used in power semiconductor devices. It has the advantages of high thermal conductivity, stable chemical properties, and high critical breakdown field strength. The active region of a SiC device is usually in the SiC epitaxial layer, so the growth of high-quality SiC epitaxial layers is extremely valuable. In this paper, we investigate the epitaxial growth of SiC on n-type 4° off-axis SiC (0 0 0–1) substrates. We used a horizontal hot-wall chemical vapor deposition apparatus for rapid epitaxy on SiC substrates, using C2H4, and SiHCl3 as precursors and H2 as carrier gas, respectively, and growing at 1350 °C,1400 °C,1450 °C,1500 °C, 1550 °C, 1600 °C for half an hour to get epitaxial layer. The effect of growth temperature on the surface morphology of SiC (0 0 0 –1) epitaxial layer was analyzed and epitaxial layers is characterized by optical microscope, scanning electron microscope, atomic force microscope and Raman scattering instrument, and the growth rate of epitaxial layer was obtained. It is found that the higher growth temperature is helpful to obtain the epitaxial layer with smooth surface and higher content of 4H-SiC under certain pressure, C/Si molar ratio, and following rate of precursor and carrier gas.
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