极紫外光刻
光离子化
光刻胶
三氟甲磺酸
光刻
离解(化学)
光化学
极端紫外线
碎片(计算)
化学
紫外线
材料科学
光电子学
光学
纳米技术
离子
物理
物理化学
计算机科学
有机化学
电离
催化作用
激光器
操作系统
图层(电子)
作者
Valentin Laffert,Faegheh S. Sajjadian,Robert Richter,Michiel J. van Setten,Fabian Holzmeier
摘要
The dissociative photoionization of phenyl triflate (C6H5OSO2CF3), a neutral photoacid generator used in photolithography, was investigated in a gas phase experiment employing extreme ultraviolet (EUV) synchrotron radiation at 92 eV and photoelectron–photoion coincidence detection. The interaction of EUV photons with the molecule leads almost exclusively to dissociation, which is dominated by a sequential fragmentation mechanism, in which SO2, CF3, CO, and C2H2 are lost. For lithographic purposes, the lack of the observation of a fragment that could serve as a precursor for the formation of triflic acid means that the effective photoacid generator concentration in a photoresist is reduced, impacting its patterning performance in EUV lithography. A better understanding of the dissociative photoionization of photoresist components and proxies thereof can provide a crucial handle that guides the design of photoresists for the upcoming technology nodes with ever decreasing feature sizes for more powerful computer chips.
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