Wafer‐Scale Growth of Monolayer MoSe 2 via Salt‐Assisted Chemical Vapor Deposition

Abstract 2D transition metal dichalcogenide (TMDs) of monolayer molybdenum diselenide (MoSe 2 ) is an emerging semiconductor for next‐generation electronics, owing to its remarkable physical and electronic properties. The realization of diverse device applications depends critically on the scalable synthesis of high‐quality monolayer MoSe 2 crystals, which remains challenging. In this study, the successful epitaxy of monolayer MoSe 2 films is demonstrated on sapphire substrates at a maximum wafer size of 2 inches via a salt‐assisted chemical vapor deposition (SA‐CVD) technique. A clean, rapid, and complete transfer process assisted by deionized water only has also been developed for the transfer of as‐grown monolayer MoSe 2 films onto the target substrates. Field‐effect transistors (FETs) fabricated from these monolayer MoSe 2 films exhibited an impressive mobility of 39.1 cm 2 V −1 s −1 and an on/off current ratio ranging from 10 8 to 10 10 . These results underscore an effective and scalable strategy for the synthesis of high‐quality TMDCs, paving the way for their integration into advanced electronic applications.