比较器
模数转换器
偏移量(计算机科学)
CMOS芯片
电子工程
晶体管
校准
绝缘体上的硅
计算机科学
电气工程
工程类
材料科学
物理
光电子学
电压
量子力学
程序设计语言
硅
作者
Vanessa H. -C. Chen,Lawrence T. Pileggi
出处
期刊:Symposium on VLSI Circuits
日期:2013-06-12
被引量:43
摘要
This paper describes a 5GS/s 6bit flash ADC fabricated in a 32nm CMOS SOI. The randomness of process mismatch is exploited to compensate for dynamic offset errors of comparators that occur during high speed operation. Utilizing the proposed calibration, comparators are designed with near-minimum size transistors and built-in reference levels. The ADC achieves an SNDR of 30.9dB at Nyquist and consumes 8.5mW with an FoM of 59.4fJ/conv-step.
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