二次离子质谱法
碲化镉光电
钝化
材料科学
杂质
半导体
光电子学
固体物理学
微观结构
化学
碲
离子
分析化学(期刊)
异质结
X射线光电子能谱
表征(材料科学)
纳米技术
冶金
图层(电子)
凝聚态物理
有机化学
物理
色谱法
作者
L. O. Bubulac,W. E. Tennant,J. Bajaj,Jack Sheng,R. J. Brigham,A. H. B. Vanderwyck,Majid Zandian,W. V. Mc Levige
摘要
The objectives of this work are to study the physical and chemical structure of CdTe films using secondary ion mass spectrometry (SIMS) and atomic force miroscopy (AFM) and to demonstrate the usefulness of these analytical techniques in determining the characteristics of CdTe-passivation films deposited by different techniques on HgCdTe material. Three key aspects of CdTe passivation of HgCdTe are addressed by different analytical tools: a) morphological microstructure of CdTe films examined by atomic force microscopy; b) compositional profile across the interface determined by Matrix (Te)—SIMS technique; c) concentration of various impurities across the CdTe/HgCdTe structure profiled by secondary ion-mass spectrometry.
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