Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates

材料科学 化学气相沉积 蓝宝石 等离子体 沉积(地质) 光电子学 化学工程 远程等离子体 纳米技术 光学 激光器 物理 工程类 古生物学 生物 量子力学 沉积物
作者
B. Claflin,Gordon Grzybowski,Stefan Zollner,Bridget R. Rogers,Thomas Cooper,D. C. Look
出处
期刊:Journal of vacuum science and technology [American Vacuum Society]
卷期号:42 (5)
标识
DOI:10.1116/6.0003689
摘要

GeSn films were simultaneously deposited on Si (100), Si (111), c-plane sapphire (Al2O3), and fused silica substrates to investigate the impact of the substrate on the resulting GeSn film. The electronic, structural, and optical properties of these films were characterized by temperature-dependent Hall-effect measurements, x-ray diffractometry, secondary ion mass spectrometry, and variable angle spectroscopic ellipsometry. All films were polycrystalline with varying degrees of texturing. The film on Si (100) contained only GeSn (100) grains, 40.4 nm in diameter. The film deposited on Si (111) contained primarily GeSn (111) grains, 36.4 nm in diameter. Both films deposited on silicon substrates were fully relaxed. The layer deposited on Al2O3 contained primarily GeSn (111) grains, 41.3 nm in diameter. The film deposited on fused silica was not textured, and the average grain size was 35.0 nm. All films contained ∼5.6 at. % Sn throughout the layer, except for the film deposited on Al2O3, which contained 7.5% Sn. The films deposited on Si (111), Al2O3, and fused silica exhibit p-type conduction over the entire temperature range, 10–325 K, while the layer deposited on the Si (100) substrate shows a mixed conduction transition from p-type at low temperature to n-type above 220 K. From ∼175 to 260 K, both holes and electrons contribute to conduction. Texturing of the GeSn film on Si (100) was the only characteristic that set this film apart from the other three films, suggesting that something related to GeSn (100) crystal orientation causes this transition from p- to n-type conduction.

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