Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface

We demonstrate an extended short-wave infrared (e-SWIR) photodetector composed of an InAs/GaAs(111)A heterostructure with interface misfit dislocations. The layer structure of the photodetector consists simply of an n-InAs optical absorption layer directly grown with a thin undoped-GaAs spacer layer on n-GaAs by molecular beam epitaxy. The lattice mismatch was abruptly relaxed by forming a misfit dislocation network at the initial stage of the InAs growth. We found high-density threading dislocations (1.5 × 10⁹ cm^-2) in the InAs layer. The current-voltage characteristics of the photodetector at 77 K had a very low dark current density (<1 × 10^-9 A cm^-2) at a positive applied voltage (electrons flow from n-GaAs to n-InAs) of up to ∼+1 V. Simulation of the band structure revealed that the direct connection of GaAs and InAs and the formation of interfacial states by the misfit dislocations play significant positive roles in suppressing dark current. Under illumination with e-SWIR light at 77 K, a clear photocurrent signal was observed with a 2.6 μm cutoff wavelength, which is consistent with the bandgap of InAs. We also demonstrated e-SWIR detection at room temperature with a 3.2 μm cutoff wavelength. The maximum detectivity at 294 K exceeds 2 × 10⁸ cm Hz^0.5 W^-1 for the detection of e-SWIR light at 2 μm.