Nanoscale Resist‐Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography

Advancements in patterning techniques for metal-organic frameworks (MOFs) are crucial for their integration into microelectronics. However, achieving precise nanoscale control of MOF structures remains challenging. In this work, a resist-free method for patterning MOFs is demonstrated using extreme ultraviolet (EUV) lithography with a resolution of 40 nm. The role of halogen atoms in the linker and the effect of humidity are analyzed through in situ and near-ambient pressure synchrotron X-ray photoelectron spectroscopy. In addition to facilitating the integration of MOFs, the results offer valuable insights for developing the highly sought-after positive-tone EUV photoresists.