A Scanning Electron and Atomic Force Microscopy Study of the Surface Morphology and Composition of CsI Films as Affected by Evaporation Rate and Humid-Air Exposure

扫描电子显微镜 材料科学 分析化学(期刊) 表面粗糙度 表面光洁度 原子力显微镜 化学 复合材料 纳米技术 环境化学
作者
N. Senesi,M.A. Nitti,A. Valentini
出处
期刊:Microscopy and Microanalysis [Oxford University Press]
卷期号:11 (2): 124-132 被引量:4
标识
DOI:10.1017/s143192760505018x
摘要

Evaporation rate and subsequent exposure to humid air affect the surface morphology and composition of cesium iodide (CsI) films and, in turn, their photoemissive efficiency when used as photocathodes. The surface morphology and elemental composition of 300-nm-thick CsI films grown at two different rates (1 nm/s and 0.04 nm/s), both freshly evaporated and after 24-h exposure to humid air were investigated by means of atomic force microscopy and scanning electron microscopy/electron diffraction spectroscopy. The CsI film freshly evaporated at a slow rate exhibited a granular surface presenting circular holes or craters where the CsI material was moved from the center to the boundaries. After 24-h exposure to humid air, this film coalesced in large grain showing a marked increase of surface roughness. Conversely, the CsI film grown at a fast rate mostly retained its original surface uniformity and homogeneity with no presence of holes and craters after 24-h exposure to humid air. Further, surface roughness and average peak height decreased, but the surface coalesced in large grains spaced by small fractures where the CsI coverage was almost lost. In conclusion, the films grown at a fast evaporation rate were affected by 24-h exposure to humid air less than those grown at a slow rate, and are thus expected to possess a greater long-term stability.
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