Quantum Transport of Sub-10 nm Monolayer WGe2N4 Transistors

Two-dimensional MA2Z4, as another system of a two-dimensional material family, can obtain different materials and considerable properties by replacing the elements M, A, and Z. At present, the physical properties and optical response of MA2Z4 materials have been studied, but there is still a lack of research on the application of MA2Z4 as a transistor channel material to investigate its transistor performance. Here, we employ WGe2N4 as a representative to systematically study the bounce-to-transport properties and gate control capability of ML WGe2N4 field effect transistors below 10 nm via ab initio quantum transport calculations. Until the channel length is down to 3.0 nm, the optimized n/p-type doped WGe2N4 metal–oxide–semiconductor field-effect transistors with proper concentrations and underlap structures can satisfy the high-performance requirements of International Technology Roadmap for Semiconductors of 2013 version, by considering the on-current, subthreshold swing, intrinsic delay time, and dynamic power indicator. Therefore, we can estimate that the monolayer WGe2N4 is a competitive alternative for transistor channel materials in the post-silicon era.