CMOS芯片
宽带
电子工程
高增益天线
电气工程
计算机科学
电信
工程类
作者
SriHarsha Vardhan G.,Deepali Pathak,Ashudeb Dutta
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2023-11-15
卷期号:71 (4): 1829-1833
被引量:2
标识
DOI:10.1109/tcsii.2023.3333047
摘要
This brief presents a bandwidth enhancement and gain flatness technique based wideband CMOS low noise amplifier for 5G NR receivers. Wide bandwidth, low noise figure, reconfigurable gain flatness is achieved by using 2-stage common source resistive feedback shunt and series inductive peaking technique respectively. The proposed reconfigurable low noise amplifier achieves gain and noise figure of 25 dB and 2 dB at high gain mode and 15 dB and 3.8 dB at low gain mode respectively. The circuit has a gain control feature to accommodate various input power levels. The designed methodology proves to get wider 3dB bandwidth from 2.5 GHz to 6.5 GHz. The design draws 10.40 mA current (without buffer) from 1.2V supply with a core silicon area of $0.35 mm^{2}$ .
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