Gallium nitride-based resonant cavity light-emitting diode with single-longitudinal-mode emission

A novel, to the best of our knowledge, gallium nitride (GaN)-based resonant cavity light-emitting diode (RCLED) with single-longitudinal-mode light emission was demonstrated. A Ta 2 O 5 /SiO 2 dielectric distributed Bragg reflector (DBR) with a filter-film structure was adopted as the top mirror. In contrast to the flat-topped reflectivity spectrum of the conventional high-reflective-structure DBR, for this filter-film-structure DBR, there is a light-transmitting concave band on the reflectivity spectrum. Owing to the modulation effect of this band on the output light, a single-longitudinal-mode light emission with a full width at half maximum as low as 0.63 nm was realized. Furthermore, the novel RCLED exhibited better wavelength stability. With an increase in the injection current from 50 to 500 mA, the redshift of the emission peak was only 0.2 nm. This novel RCLED with ultra-narrowband emission has a high potential for application in optical communication systems and optical fiber sensing applications.