A label-free dielectric-modulated biosensor using SiGe-heterojunction dual cavity dual metal electrically doped TFET

Abstract The detection of biomolecules has been accomplished in this article by using the tunnel field effect transistor’s (TFET) bipolar nature. The fabrication procedure has been made simpler, the prices have gone down, and random dopant fluctuation (RDFs) have been eliminated using the charge plasma concept. The objective of this work is to investigate the performance of a DopingLess- Dual Metal Gate- Dual Cavity- HeteroJunction- Tunnel Field Effect Transistor (DL-DMG-DC-HJ-TFET) biosensor that can sense biomolecules in both the ON and ambipolar states. It is feasible to recognize many types of biomolecules concurrently by taking into account the cavities at both tunneling junctions. The suggested biosensor’s OFF state current has been reduced and its sensitivity has been increased via the use of gate workfunction engineering and bandgap engineering. It has been investigated how the presence of proteins in the cavities affects electrical properties such as energy band diagram (EBD), surface potential (SP), subthreshold Swing (SS), threshold voltage ( V T H ) , and current ratio ( I O N / I O F F ) . The impact of temperature, germanium mole fraction, and position of biomolecules is also analyzed in this work. A comparative analysis for drain current sensitivity is presented considering different previous works.