记忆电阻器
异质结
材料科学
灵活性(工程)
纳米技术
工程物理
计算
计算机科学
电子工程
光电子学
工程类
算法
数学
统计
作者
Shiwei Qin,Ye Tao,Ting Hu,Shaojie Zhang,Chenying Feng,Lin Lv,Guokun Ma,Yiheng Rao,Liangping Shen,Houzhao Wan,Hao Wang
标识
DOI:10.1016/j.mtphys.2024.101336
摘要
Memristors offer vast application opportunities in storage, logic devices, and computation due to their non-volatility, low power consumption, and fast operational speeds. Two-dimensional materials, characterized by their novel mechanisms, ultra-thin channels, high mechanical flexibility, and superior electrical properties, demonstrate immense potential in the domain of high-density, fast, and energy-efficient memristors. Heterostructures made of two-dimensional materials combine the physical, chemical, and mechanical properties of different two-dimensional materials, setting the stage for notable developmental prospects. This article summarizes the research progress of two-dimensional material heterostructure memristors in recent years, the application of two-dimensional materials and their heterostructures in the manufacturing of memristors and their physical switching mechanisms, and puts forward several prospects for their future development.
科研通智能强力驱动
Strongly Powered by AbleSci AI