Tunable the buffer layers of solution processed inverted P3HT:PC61BM solar cell

The present work, we examined the effect of anode interfacial layer molybdenum oxides (MoOx) with three different rpm on device fabrication of inverted bulk heterojunction (BHJ) solar cell based on a blend of poly (3-hexylthiophene): (6,6) -phenyl C61 butyric acid methyl ester (P3HT: PC61BM) active layer, zinc oxide (ZnO) as electron transport layer (ETL) and MoOx as hole transport layer (HTL). Buffer layer rpm is one of the important role plays was explored to improve the photovoltaic performance in this device. We found the optimum rpm for MoOx layer formation and observed with the effect of ZnO-GO/RGO/NG/CQDs composites cathode buffer layer to enhance the performance. Power conversion efficiency was carried out under simulated AM 1.5G illumination of 100 mW/cm2.