An Optogenetics‐Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network (Adv. Mater. 40/2021)

Advanced MaterialsVolume 33, Issue 40 2170316 FrontispieceFree Access An Optogenetics-Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network (Adv. Mater. 40/2021) Seunghwan Seo, Seunghwan Seo Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorJe-Jun Lee, Je-Jun Lee Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorRyong-Gyu Lee, Ryong-Gyu Lee School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 KoreaSearch for more papers by this authorTae Hyung Kim, Tae Hyung Kim School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 KoreaSearch for more papers by this authorSangyong Park, Sangyong Park Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419 Korea Flash Process Architecture Team, Samsung Electronics Co. Ltd, Pyeongtaek, 17786 KoreaSearch for more papers by this authorSooyoung Jung, Sooyoung Jung Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorHyun-Kyu Lee, Hyun-Kyu Lee Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorMaksim Andreev, Maksim Andreev Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorKyeong-Bae Lee, Kyeong-Bae Lee Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorKil-Su Jung, Kil-Su Jung Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419 Korea Memory Technology Design Team, Samsung Electronics Co. Ltd, Hwasung, 18448 KoreaSearch for more papers by this authorSeyong Oh, Seyong Oh Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 Korea Querrey Simpson Institute for Bioelectronics (QSIB), Northwestern University, Evanston, IL, 60208 USASearch for more papers by this authorHo-Jun Lee, Ho-Jun Lee Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorKi Seok Kim, Ki Seok Kim Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02139 USA School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16417 KoreaSearch for more papers by this authorGeun Young Yeom, Geun Young Yeom School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16417 KoreaSearch for more papers by this authorYong-Hoon Kim, Yong-Hoon Kim School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 KoreaSearch for more papers by this authorJin-Hong Park, Jin-Hong Park Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 Korea Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417 KoreaSearch for more papers by this author Seunghwan Seo, Seunghwan Seo Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorJe-Jun Lee, Je-Jun Lee Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorRyong-Gyu Lee, Ryong-Gyu Lee School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 KoreaSearch for more papers by this authorTae Hyung Kim, Tae Hyung Kim School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 KoreaSearch for more papers by this authorSangyong Park, Sangyong Park Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419 Korea Flash Process Architecture Team, Samsung Electronics Co. Ltd, Pyeongtaek, 17786 KoreaSearch for more papers by this authorSooyoung Jung, Sooyoung Jung Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorHyun-Kyu Lee, Hyun-Kyu Lee Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorMaksim Andreev, Maksim Andreev Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorKyeong-Bae Lee, Kyeong-Bae Lee Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorKil-Su Jung, Kil-Su Jung Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419 Korea Memory Technology Design Team, Samsung Electronics Co. Ltd, Hwasung, 18448 KoreaSearch for more papers by this authorSeyong Oh, Seyong Oh Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 Korea Querrey Simpson Institute for Bioelectronics (QSIB), Northwestern University, Evanston, IL, 60208 USASearch for more papers by this authorHo-Jun Lee, Ho-Jun Lee Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 KoreaSearch for more papers by this authorKi Seok Kim, Ki Seok Kim Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02139 USA School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16417 KoreaSearch for more papers by this authorGeun Young Yeom, Geun Young Yeom School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16417 KoreaSearch for more papers by this authorYong-Hoon Kim, Yong-Hoon Kim School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 KoreaSearch for more papers by this authorJin-Hong Park, Jin-Hong Park Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419 Korea Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417 KoreaSearch for more papers by this author First published: 05 October 2021 https://doi.org/10.1002/adma.202170316Citations: 2AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract Optoelectronic Synapses In article number 2102980, a flexible optoelectronic synapse fabricated on 2D van der Waals (vdW) layered rhenium disulfide, which features an inherent photosensitive memory nature derived from the persistent photoconductivity effect, is presented by Yong-Hoon Kim, Jin-Hong Park, and co-workers. After in-depth analysis including density functional theory calculations on rhenium disulfide, its feasibility for a hardware neural network with learning ability is also demonstrated using a convolutional neural network composed of vdW optoelectronic synapses. Citing Literature Volume33, Issue40October 7, 20212170316 RelatedInformation