A GaN/Diamond HEMTs with 23 W/mm for Next Generation High Power RF Application

This work demonstrated a successful fabrication of 4" GaN/Diamond HEMTs incorporated with Inner Slot Via Hole process. The RF device parameters were measured On-wafer Load pull measurement. The power density of 23.2 W/mm at Vds = 100 V is obtained at a wafer level at 2 GHz pulse power measurements.