材料科学
多物理
非阻塞I/O
重置(财务)
蛋白质丝
焦耳加热
退火(玻璃)
透射电子显微镜
电铸
电压
光电子学
凝聚态物理
复合材料
热力学
纳米技术
化学
电气工程
物理
有限元法
图层(电子)
工程类
催化作用
经济
金融经济学
生物化学
作者
Debashis Panda,Paritosh Piyush Sahu
摘要
This paper utilizes an analytical and a filament dissolution model to calculate the local temperature increase in conducting filaments (CFs) of pulsed laser ablated unipolar NiO resistive switching memory devices. Electrical current voltage characteristics indicate unipolar switching. The formation of NiO phases is confirmed from the X-ray diffraction study. Transmission electron microscopy confirms the polycrystalline nature of NiO films having a thickness of ∼20 nm. Electrothermal simulations based on the filament dissolution model are performed using COMSOL Multiphysics® to model the CF rupture during the reset transition in the samples owing to the Joule heating effect. Obtained temperature profiles from the simulations are compared with the analytical model. Both the models corroborate with each other, allowing us to closely approximate the maximum temperature across the CF (Tcrit). This is the point corresponding to which the voltage applied across the cell (Vreset) drives the device into the reset state. The effect of annealing temperature on the maximum temperature, reset voltage, and CF diameter of the device is also discussed. The CF diameter and area of the filament are precisely estimated from the simulation.
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