溅射
等离子体增强化学气相沉积
分析化学(期刊)
硅
化学气相沉积
电极
离子
化学
沉积(地质)
溅射沉积
材料科学
薄膜
纳米技术
光电子学
物理化学
色谱法
生物
古生物学
有机化学
沉积物
作者
Kees Landheer,W. J. Goedheer,Ioannis Poulios,R.E.I. Schropp,J.K. Rath
摘要
We investigated chemical sputtering of silicon films by Hy+ ions (with y being 2 and 3) in an asymmetric VHF Plasma Enhanced Chemical Vapor Deposition (PECVD) discharge in detail. In experiments with discharges created with pure H2 inlet flows, we observed that more Si was etched from the powered than from the grounded electrode, and this resulted in a net deposition on the grounded electrode. With experimental input data from a power density series of discharges with pure H2 inlet flows, we were able to model this process with a chemical sputtering mechanism. The obtained chemical sputtering yields were (0.3–0.4) ± 0.1 Si atom per bombarding Hy+ ion at the grounded electrode and at the powered electrode the yield ranged from (0.4 to 0.65) ± 0.1. Subsequently, we investigated the role of chemical sputtering during PECVD deposition with a series of silane fractions SF (SF(%) = [SiH4]/[H2]*100) ranging from SF = 0% to 20%. We experimentally observed that the SiHy+ flux is not proportional to SF but decreasing from SF = 3.4% to 20%. This counterintuitive SiHy+ flux trend was partly explained by an increasing chemical sputtering rate with decreasing SF and partly by the reaction between H3+ and SiH4 that forms SiH3+.
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