等离子体增强化学气相沉积
材料科学
硅烷
椭圆偏振法
氮化硅
无定形固体
傅里叶变换红外光谱
薄膜
非晶硅
分析化学(期刊)
高分辨率透射电子显微镜
折射率
化学气相沉积
硅
光致发光
透射电子显微镜
晶体硅
光学
纳米技术
光电子学
化学
结晶学
复合材料
有机化学
物理
标识
DOI:10.1016/j.mseb.2019.05.024
摘要
Plasma enhanced chemical vapor deposition (PECVD) technique was used to deposit silicon nitride (SiNx) thin films. The silane (SiH4) and ammonia (NH3) were used as reactant gases. Both the flow rates of the NH3 and SiH4 gases were changed but total flow rate kept constant to obtain the different ratio nitrogen (N) in the SiNx films. Fourier transform infrared spectroscopy (FTIR) was used to get information about absorption ratios of the films and the bond types in the films. The refractive index of the films was obtained from ellipsometry measurements. From FTIR measurements and ellipsometry measurements, refractive index for amorphous silicon (Si) and refractive index for stoichiometric SiNx were found as 3.27 and 1.91, respectively. The photoluminescence (PL) measurements were used to see the luminescent of the amorphous Si nanoparticles which were occurred spontaneously during deposition process. High resolution transmission electron microscopy (HRTEM) was used to analyze the Si nanoparticle size.
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