塞贝克系数
材料科学
热电效应
薄膜
拉曼光谱
电阻率和电导率
半导体
热电材料
相(物质)
光电子学
分析化学(期刊)
复合材料
纳米技术
热导率
光学
电气工程
有机化学
热力学
化学
物理
工程类
作者
Arslan Ashfaq,Sofia Tahir,U. Rehman,Adnan Ali,Khalid Mehmood,Fareeha Ashfaq,Waqas Ahmad,Khushi Muhammad Khan,Muhammad Haneef,Hina Mushtaq,Nasir Amin,Rabia Saeed,Kainat shabbir
标识
DOI:10.1016/j.ceramint.2022.03.175
摘要
Two-dimensional transition metal dichalcogenide semiconductors (TMDCs) like MoS2 are becoming more popular as thermoelectric materials because they are abundant, nontoxic, and have good performance. In the study, the MoS2 thin films have prepared by the sputtering and post-sulfurization process at various temperatures 450 °C, 550 °C, 650 °C, and 750 °C. The XRD data exhibits the formation of the 2H phase of MoS2 thin film with (002), (004), and (006) planes. The Raman spectroscopy has confirmed the 2H–MoS2 thin films with 2LA (M), A1g, E2g, and Eg vibrational modes. The SEM images have shown the thin MoS2 flakes. The Seebeck and electrical conductivity data indicated an enhancement in Seebeck coefficient and electrical conductivity from 20 to 31 μV/°C and 26–53 S/m, respectively, as the post sulfurization temperature increased from 450 °C to 750 °C. The enhancement of the Seebeck coefficient and electrical conductivity have been linked to the perfection of the 2H phase of MoS2 film. The improved crystal structure has increased carrier mobility, leading to a high power factor of the 5.09 μWm−1C−2.
科研通智能强力驱动
Strongly Powered by AbleSci AI