薄脆饼
铟
空位缺陷
材料科学
光电子学
航程(航空)
纳米技术
结晶学
复合材料
化学
作者
Azmira Jannat,Qi-Feng Yao,Ali Zavabeti,Nitu Syed,Baoyue Zhang,Taimur Ahmed,Sruthi Kuriakose,Md Mohiuddin,Naresh Pillai,Farjana Haque,Guanghui Ren,Dong Mei Zhu,Ningyan Cheng,Yi Du,Sherif Abdulkader Tawfik,Michelle J. S. Spencer,Billy J. Murdoch,Lan Wang,C. F. McConville,Sumeet Walia
出处
期刊:Materials horizons
[Royal Society of Chemistry]
日期:2019-11-16
卷期号:7 (3): 827-834
被引量:35
摘要
The unique and long-range ordered-vacancy structure in wafer-scale grown single-unit-cell-thick In2S3 facilitates excellent electronic performance.
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