聚噻吩
共轭体系
材料科学
噻吩
轨道能级差
聚合物
热电效应
塞贝克系数
结晶度
兴奋剂
导电聚合物
戒指(化学)
高分子化学
有机化学
光电子学
化学
分子
复合材料
热导率
物理
热力学
作者
Sihui Deng,Changshuai Dong,Jian Liu,Bin Meng,Junli Hu,Min Yang,Hongkun Tian,Jun Liu,Lixiang Wang
标识
DOI:10.1002/anie.202216049
摘要
Typical n-type conjugated polymers are based on fused-ring electron-accepting building blocks. Herein, we report a non-fused-ring strategy to design n-type conjugated polymers, i.e. introducing electron-withdrawing imide or cyano groups to each thiophene unit of a non-fused-ring polythiophene backbone. The resulting polymer, n-PT1, shows low LUMO/HOMO energy levels of -3.91 eV/-6.22 eV, high electron mobility of 0.39 cm2 V-1 s-1 and high crystallinity in thin film. After n-doping, n-PT1 exhibits excellent thermoelectric performance with an electrical conductivity of 61.2 S cm-1 and a power factor (PF) of 141.7 μW m-1 K-2 . This PF is the highest value reported so far for n-type conjugated polymers and this is the first time for polythiophene derivatives to be used in n-type organic thermoelectrics. The excellent thermoelectric performance of n-PT1 is due to its superior tolerance to doping. This work indicates that polythiophene derivatives without fused rings are low-cost and high-performance n-type conjugated polymers.
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