发光二极管
电致发光
镧系元素
发光
钙钛矿(结构)
量子效率
量子点
材料科学
光电子学
荧光粉
镱
纳米技术
分析化学(期刊)
化学
兴奋剂
结晶学
有机化学
离子
图层(电子)
作者
Jia‐Lin Pan,Wan‐Shan Shen,Sheng‐Nan Li,Zhong‐Da Zhang,Feng Zhao,Hong-Wei Duan,Ya‐Kun Wang,Liang‐Sheng Liao
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-02-23
卷期号:24 (9): 2765-2772
被引量:9
标识
DOI:10.1021/acs.nanolett.3c04586
摘要
Alloying lanthanide ions (Yb3+) into perovskite quantum dots (Yb3+:CsPb(Cl1–xBrx)3) is an effective method to achieve efficient near-infrared (NIR) luminescence (>950 nm). Increasing the Yb3+ alloying ratio in the perovskite matrix enhances the luminescence intensity of Yb3+ emission at 990 nm. However, high Yb3+ alloying (>15%) results in vacancy-induced inferior material stability. In this work, we developed a polarity-mediated antisolvent manipulation strategy to resolve the incompatibility between a high Yb3+ alloying ratio and inferior stability of Yb3+:CsPb(Cl1–xBrx)3. Precise control of solution polarity enables increased uniformity of the perovskite matrix with fewer trap densities. Employing this strategy, we obtain Yb3+:CsPb(Cl1–xBrx)3 with the highest Yb3+ alloying ratio of 30.2% and a 2-fold higher electroluminescence intensity at 990 nm. We lever the engineered Yb3+:CsPb(Cl1–xBrx)3 to fabricate NIR-LEDs, achieving a peak external quantum efficiency (EQE) of 8.5% at 990 nm: this represents the highest among perovskite NIR-LEDs with an emission wavelength above 950 nm.
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