材料科学
神经形态工程学
量子点
光电子学
石墨烯
兴奋性突触后电位
神经促进
突触可塑性
长时程增强
纳米技术
神经科学
计算机科学
化学
人工神经网络
生物化学
受体
机器学习
抑制性突触后电位
生物
作者
Lu Wang,Shutao Wei,Jiachu Xie,Youlun Ju,Tianyu Yang,Dianzhong Wen
出处
期刊:Nanomaterials
[MDPI AG]
日期:2023-11-24
卷期号:13 (23): 3012-3012
摘要
As artificial synapse devices, memristors have attracted widespread attention in the field of neuromorphic computing. In this paper, Al/polymethyl methacrylate (PMMA)/egg albumen (EA)–graphene quantum dots (GQDs)/PMMA/indium tin oxide (ITO) electrically/optically tunable biomemristors were fabricated using the egg protein as a dielectric layer. The electrons in the GQDs were injected from the quantum dots into the dielectric layer or into the adjacent quantum dots under the excitation of light, and the EA–GQDs dielectric layer formed a pathway composed of GQDs for electronic transmission. The device successfully performed nine brain synaptic functions: excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), short-term depression (STD), the transition from short-term plasticity to long-term plasticity, spike-timing-dependent plasticity (STDP), spike-rate-dependent plasticity (SRDP), the process of learning, forgetting, and relearning, and Pavlov associative memory under UV light stimulation. The successful simulation of the synaptic behavior of this device provides the possibility for biomaterials to realize neuromorphic computing.
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