电容
偏移量(计算机科学)
动态范围
CMOS芯片
符号
电气工程
炸薯条
电子工程
数学
拓扑(电路)
物理
计算机科学
工程类
量子力学
算术
电极
程序设计语言
作者
Min-Sung Kim,Sang‐Min Han,Suhwan Kim,Changyong Rhee
出处
期刊:IEEE Sensors Journal
[Institute of Electrical and Electronics Engineers]
日期:2023-08-15
卷期号:23 (16): 18325-18337
标识
DOI:10.1109/jsen.2023.3292274
摘要
This article presents a self-capacitance sensing system for proximity sensors with a wide offset capacitance range. Auto-calibration technique is adopted to compensate for the large sensor offset capacitance and achieve high sensitivity and dynamic range (DR). Sensor capacitance is converted to a voltage by a capacitance-to-voltage ( ${C}/{V}{)}$ converter that performs conversions during both the charge and discharge phases of operation, which we call consecutive double-sided conversion (CDSC). The conversion technique doubles the number of conversions compared to a conventional structure to improve the power efficiency. The adjustment of an appropriate duty cycle for the clock signal applied in the ${C}/{V}$ converter and delta-sigma modulator reduces the power consumption. A prototype chip has been fabricated in a 0.13 $\mu \text{m}$ CMOS technology. The analog circuits occupy an area of 0.264 mm2, dissipating 4.04 mW. It achieves an effective DR of 105 dB in a conversion time of 4.1 ms when the offset capacitance is 215 pF.
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