神经科学
突触后电位
抑制性突触后电位
该死的
化学
加巴能
多巴胺
突触后电流
兴奋剂
生物
阿片受体
受体
兴奋性突触后电位
生物化学
作者
Kyle A. Brown,Michael Stramiello,Jason K. Clark,John J. Wagner
标识
DOI:10.1152/jn.00353.2024
摘要
Although the actions of dopamine throughout the brain are clearly linked to motivation and cognition, the specific role(s) of dopamine in the CA1 subfield of the ventral hippocampus (vH) is unresolved. Prior preclinical studies suggest that dopamine D 3 receptors (D 3 R) expressed on CA1 pyramidal cells exhibit a unique capacity to modulate mechanisms of long-term synaptic plasticity, but less is known about how interneurononal inputs modulate these cells. We hypothesized that inputs from μ opioid receptor (MOR)-expressing inhibitory interneurons selectively modulate the activity of postsynaptic D 3 Rs expressed on CA1 principal cells to shape neurotransmission in the rat vH. We used the whole-cell voltage clamp technique to test this hypothesis by measuring evoked inhibitory postsynaptic currents (eIPSCs) from CA1 principal cells in vH slices or GABA A currents from acutely dissociated vH neurons. The eIPSC response recorded from CA1 neurons in vH slices was inhibited by either the MOR agonist DAMGO or the D 3 R agonist PD128907, but pretreatment with DAMGO occluded any further inhibition by PD128907. GABAA currents measured in acutely dissociated vH CA1 neurons were inhibited by D 3 R activation via PD128907, consistent with postsynaptic localization of D 3 receptors. Kinetic alterations induced by the neuromodulatory agonists are consistent with selective targeting of postsynaptic D 3 Rs expressed on CA1 principal cells by MOR-expressing GABAergic inputs. Our findings suggest postsynaptic D 3 R-mediated modulation of MOR-expressing GABAergic inputs is a site at which dopaminergic and opioidergic activity may contribute to disinhibition of vH excitatory neurotransmission, and, thus, influence critical physiological processes such as synaptic plasticity and network oscillations.
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