芯片组
比克莫斯
基带
放大器
电子工程
可变增益放大器
硅锗
计算机科学
电气工程
CMOS芯片
工程类
炸薯条
晶体管
硅
运算放大器
材料科学
光电子学
电压
作者
Kiat Seng Yeo,Bharatha Kumar Thangarasu,Kaixue Ma
标识
DOI:10.1109/icsict.2014.7021416
摘要
This paper presents the proposed silicon proven design techniques and the performance tradeoffs in the generic digitally variable gain amplifier (DVGA) designs. Two example designs were fabricated in a SiGe BiCMOS technology incorporating these design techniques and measured with good performance. Both the proposed designs, with low power consumption and compact size, are adapted in RF chipset with good interface capability between the RF front-end and the baseband chipsets.
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