石墨烯
吸附
氢
硼
氢气储存
密度泛函理论
材料科学
兴奋剂
碳纤维
Atom(片上系统)
氢原子
无机化学
化学物理
化学
物理化学
纳米技术
计算化学
复合数
有机化学
烷基
计算机科学
光电子学
复合材料
嵌入式系统
作者
Yungang Zhou,Xihong Zu,Fei Gao,Jinlan Nie,Haiyan Xiao
摘要
The doping effects of boron on the atomic adsorption of hydrogen on graphene have been investigated using density functional theory calculations. The hydrogen adsorption energies and electronic structures have been considered for pristine and B-doped graphene with the adsorption of hydrogen on top of carbon or boron atom. It is found that the B-doping forms an electron-deficient structure and decreases the hydrogen adsorption energy dramatically. For the adsorption of hydrogen on top of other sites, similar results have also been found. These results indicate that the hydrogen storage capacity is improved by the doping of B atom.
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