等离子体增强化学气相沉积
材料科学
微晶
兴奋剂
分析化学(期刊)
图层(电子)
薄膜
硅
化学气相沉积
晶体硅
纳米技术
结晶学
光电子学
化学
色谱法
标识
DOI:10.1109/icsai48974.2019.9010228
摘要
P-type (boron-doped) microcrystalline silicon $(\mu \mathrm{c}-\mathrm{Si}:\mathrm{H})$ thin films were fabricated by plasma-enhanced chemical vapor deposition at 13.56MHZ (RF-PECVD) in this work. The factors affecting the film properties, such as pressure, power and doping ratio, were studied in this paper. After parameters optimization, we got a $\mathrm{pc}-\mathrm{Si}:\mathrm{H}$ film with a thickness of 33 nm, a dark-conductivity of 1.81 $\mathrm{S}\cdot \mathrm{cm}-1$ , an activation energy of 25 meV and a crystalline ratio of 57%. In addition, p-type $\mu \mathrm{c}-\mathrm{Si}: \mathrm{films}$ with various crystalline ratio had been applied in single-junction μc-Si solar cells. The results indicated that high crystalline p-layers could enhance the i-layer crystalline ratio and it might be contribute to the reducing of the incubation layer thickness. The crystalline ratio of p-layer should exceed 30% to reduce the influence on i-layer's crystalline ratio.
科研通智能强力驱动
Strongly Powered by AbleSci AI