Deposition High Quality P-type Microcrystalline Silicon Thin Films by RF-PECVD

P-type (boron-doped) microcrystalline silicon (μc-Si:H) thin films were fabricated by plasma-enhanced chemical vapor deposition at 13.56MHZ (RF-PECVD) in this work. The factors affecting the film properties, such as pressure, power and doping ratio, were studied in this paper. After parameters optimization, we got a pc-Si:H film with a thickness of 33 nm, a dark-conductivity of 1.81 S·cm-1, an activation energy of 25 meV and a crystalline ratio of 57%. In addition, p-type μc-Si: films with various crystalline ratio had been applied in single-junction μc-Si solar cells. The results indicated that high crystalline p-layers could enhance the i-layer crystalline ratio and it might be contribute to the reducing of the incubation layer thickness. The crystalline ratio of p-layer should exceed 30% to reduce the influence on i-layer's crystalline ratio.