激光器
碲化镉光电
量子点
材料科学
光电子学
光学腔
量子阱
量子点激光器
光学
辐射
物理
原子物理学
出处
期刊:Journal of physics
[IOP Publishing]
日期:2021-03-01
卷期号:1829 (1): 012005-012005
标识
DOI:10.1088/1742-6596/1829/1/012005
摘要
Abstract The optoelectronic properties of Hg 0.8 Cd 0.2 Te/CdTe quantum wire laser are investigated, with emphasis on the effect of wire width (W) and barrier width (B) on the optical confinement factor (Г), the optical threshold gain ( g th ) and the effect number of well ( N w ) on the confinement factor have been calculated. The laser operation system has been studied in the two cases; the number of well (2 and 3). It found that in our theoretical study, the values affect the work of a multiple laser system operating a number of well 2 was (W= 65nm, B = 40 nm), the value of optical confinement factor equals (Г= 0.055) and the amount of optical threshold gain was ( g th = 38 cm −1 ). Further, the suitable values for multi quantum wire system is running a number of well 3 was (W= 42 nm, B = 60 nm), optical confinement factor equal to (Г= 0.048) and the threshold gain ( g th = 42 cm −1 ). Theoretically, the principle of operation of a laser device depends on the resonator, the effective medium, and the stimulated emission of light radiation which is represented the important process in the work of device. It is found that the effect of optical confinement factor causes an increase in the reflectivity of laser beam in the cavity therefore decrease in the amount of optical threshold gain, noted that the amount of reflection was installed to study the change of other electronic characteristics of the multiple quantum wire.
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