记忆电阻器
材料科学
加法器
记忆晶体管
重置(财务)
集合(抽象数据类型)
非易失性存储器
晶体管
逻辑门
计算机科学
电压
光电子学
电子工程
电阻随机存取存储器
电气工程
算法
工程类
CMOS芯片
金融经济学
程序设计语言
经济
作者
Bochang Li,Wei Wei,Li Luo,Ming Gao,Zhi Gen Yu,Sifan Li,Kah‐Wee Ang,Chunxiang Zhu
标识
DOI:10.1002/aelm.202200089
摘要
Abstract Memristors are intensively studied as being regarded as the critical components to realize the in‐memory computing paradigm. A novel electrochemical metallization memristor based on solution‐processed Pt/CuI/Cu structure is proposed and demonstrated in this work, with a high resistance switching ratio of 1.53 × 10 7 . Owing to the efficient drift paths provided by Cu vacancies for Cu cations in CuI, very small operating voltages ( V set = 0.64 V and V reset = −0.19 V) are characterized, contributing to ultralow standby power consumption of 9 fW and per set transition of 8.73 µW. Using CuI memristor arrays, a set of Boolean logic operations and a half‐adder are implemented. Moreover, by building the model for a 75 × 48 one‐transistor‐one‐memristor array, the feasibility of hardware encryption and decryption for images is verified. All these demonstrate that solution‐processed CuI memristors possess great potential in constructing energy‐efficient logic‐in‐memory computing architectures.
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