铁磁性
自旋电子学
凝聚态物理
交换互动
材料科学
光电发射光谱学
带隙
半导体
X射线光电子能谱
光电子学
核磁共振
物理
作者
Hidetoshi Miyazaki,Tetsuya Hajiri,Masaharu Matsunami,M. Inukai,Takahiro Ito,Shin‐ichi Kimura
标识
DOI:10.3389/fnano.2022.872717
摘要
The electronic structure of single-crystalline EuO (100) ultrathin films, together with their exchange splitting energy ( ΔE EX ) and ferromagnetic phase transition temperature ( T C ), was investigated by temperature- and thickness-dependent angle-resolved photoemission spectroscopy. Both ΔE EX and T C decreased monotonically with decreasing film thickness. The band shift showed an opposite thickness dependence at the Γ and X points, reflecting the balance of the hybridization between the Eu 4 f and O 2 p states (super-exchange interaction) and between the Eu 4 f , O 2 p , and Eu 5 d states (indirect-exchange interaction). The observed transition from an indirect energy gap in the bulk to a direct gap in the ultrathin films of the ferromagnetic semiconductor EuO could be potential in future spintronic devices.
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