Bias-selectable three-color InAs/GaSb superlattice infrared detectors based on a resonant tunneling barrier

Abstract Integrating spectral information from multiple bands significantly enhances object recognition, identification, and tracking capabilities, driving the rapid development of multi-spectral infrared imaging systems. However, achieving high-performance, low-power, multi-band infrared detection remains a critical challenge. This study proposes a bias-selectable three-color infrared photodetector based on the InAs/GaSb type-II superlattice (T2SL) material system, which is capable of covering the short-wave infrared (SWIR), mid-wave infrared (MWIR), and long-wave infrared (LWIR) bands. The device incorporates a resonant tunneling barrier to facilitate wavelength selection and carrier transport, reducing the operating voltage. It addresses key challenges in focal plane array compatibility, including low power consumption and a high signal-to-noise ratio. Simulations show that the detector demonstrates 50% cutoff wavelengths of 2.9, 5.2, and 10.6 μ m for the SWIR, MWIR, and LWIR bands, respectively, with peak quantum efficiencies of 34%, 42.8%, and 30% at 77 K. The device also achieves low dark current densities and high detectivity, showcasing its potential for advanced multi-spectral imaging applications in remote sensing, night vision, and spectroscopy.