Numerical Study of a Vertical Tunneling Transistor Based on Gr/BC2N/BC6N and BC2N′/hBN/BC2N′ Heterostructures

We present the results of our computational study on the electrical characteristics of vertical tunneling field-effect transistors (VT-FETs) based on one- and two-dimensional (1D and 2D) configurations of the Gr/BC2N/BC6N heterostructure (2D-VT-FET1 and NR-VT-FET1). In a similar set of heterostructure NR-VT-FET1, we replace the source (Gr) and drain (BC6N) with BC2N′ and the barrier (BC2N) with hBN (i.e., BC2N′/hBN/BC2N′), labeled as NR-VT-FET2. To obtain the device characteristics [i.e., ION/IOFF ratio, subthreshold swing (SS), and the gate time delay], we employ a nonequilibrium Green function formalism with an atomistic tight-binding (TB) approximation. To acquire the TB parameters, we fit the TB band structure results to those obtained from the density functional theory. The numerical results show that increasing the number of barrier layers in either set of NR-VT-FETs improves the ION/IOFF ratio and SS, degrading the gate delay. Furthermore, as the ribbon width in the set of VT-FET1 increases, the related ION/IOFF ratio decreases. The results also show that, at room temperature, the current modulation as high as ∼2.66 × 1010 (1.72 × 109) is obtained for the NR-VT-FET1(2) when biased at 0.5 (0.6) V. These results show remarkable improvements in comparison with the current modulation obtained from the lateral and vertical tunneling transistors reported earlier. The corresponding SS is as low as 27.63 (25.66) mV/decade. The parameters obtained for the NR-VT-FET1 satisfy the International Technology Roadmap for Semiconductors and International Roadmap for Devices and Systems. These VT-FETs can be suitable for sensor applications due to their low SS.