Prototype measurement results in a 65 nm technology and TCAD simulations towards more radiation tolerant monolithic pixel sensors

Abstract Early measurements on monolithic pixel sensor prototypes in the TPSCo 65 nm technology indicate a different response and radiation tolerance (up to 5×10 15 1 MeV n eq cm) for different sensor layout and process variants, illustrating the importance of layout and process in the path towards increased sensor radiation tolerance. Using these measurement results, TCAD simulations provide more insight to link the macroscopic behaviour of specific sensor variants to the details of its structure. With this insight we can propose a new variant combining the advantages of several measured variants as a path to even better radiation tolerance for the next iteration.