惠斯通大桥
加速度计
绝缘体上的硅
材料科学
温度系数
薄脆饼
温度测量
温度控制
加速度
光电子学
有限元法
灵敏度(控制系统)
硅
声学
复合材料
电子工程
电气工程
电阻器
物理
机械工程
工程类
结构工程
电压
经典力学
量子力学
作者
Kyung Il Lee,Hidekuni Takao,Kazuaki Sawada,M. Ishida
标识
DOI:10.1016/s0924-4247(02)00483-1
摘要
In this paper, a three-axis accelerometer for high temperatures using constant temperature control of silicon on insulator (SOI) piezoresistors is proposed for reduction of temperature drift. The accelerometer has surrounding mass structure, and piezoresistors for four wheatstone bridges to detect three-axis acceleration. A temperature sensor using the whole resistance of four wheatstone bridges and micro-heaters are integrated on the beam structures. The structure of accelerometer was optimized with finite element method (FEM) simulation program, ANSYS. The accelerometer was fabricated with SOI wafers by bulk-micromachining. Temperature dependence of the fabricated three-axis accelerometer on variation of atmospheric temperature (from room temperature to 300 °C) is much reduced by keeping the temperature of piezoresistors at 300 °C. Temperature coefficient of sensitivity (TCS) is much reduced to 72% of the original TCS.
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