双层
凝聚态物理
费米能级
铋
电子能带结构
材料科学
光电发射光谱学
对称(几何)
电子结构
费米面
紧密结合
带隙
物理
分子物理学
化学
X射线光电子能谱
核磁共振
几何学
超导电性
数学
膜
冶金
电子
量子力学
生物化学
作者
Christian R. Ast,Hartmut Höchst
出处
期刊:Physical review
日期:2003-03-24
卷期号:67 (11)
被引量:93
标识
DOI:10.1103/physrevb.67.113102
摘要
Using angle-resolved photoemission spectroscopy, we identified four two-dimensional bands within a 1 eV binding-energy region below the Fermi level. The top two bands that are part of the complex Fermi surface of Bi (111) are located in the projected bulk band gap and exhibit sixfold rotational symmetry of the top Bi bilayer. The two lower-lying bands reside inside the projected bulk band structure. The threefold rotational symmetry of these bands indicates a weak interaction with the underlying bulk bands. Our data can be explained with a tight-binding calculation of a bilayer by eliminating the second nearest-neighbor interactions that determine the coupling between bilayers in bulk Bi.
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