Electrical properties of AlGaN/GaN HEMT under different temperatures

Heterojunction HEMT (high electron mobility transistor) exhibit exception physical properties, such as high electron saturation velocity, high breakdown field strength and high surface charge density, making them a global research focus. However, with the ambient temperature of AlGaN/GaN HEMT devices increase, it is crucial to investigate the electrical characteristics of the HEMT under varying temperature condition to ensure reliability at room temperature and above. In this paper, the characteristics of commercial HEMT devices are studied from three aspects: firstly, the basic structure and working principle of HEMT. Secondly, two-dimensional electron gas characteristics of AlGaN/GaN HEMT are examined; and lastly, the temperature-dependent DC characteristics of AlGaN/GaN HEMT are analyzed in depth. This study presents the effects of temperature on 2DEG (two-dimensional electron gas) concentration and mobility, providing a deeper understanding of HEMT device performance. This information is useful in the development of more reliable and efficient power converters for electric vehicles, mobile phone chargers, renewable energy systems, and data centers.