光电探测器
光电流
光电子学
材料科学
钙钛矿(结构)
瞬态响应
卤化物
光电导性
半导体
瞬态(计算机编程)
电压
化学
物理
无机化学
电气工程
计算机科学
结晶学
工程类
操作系统
量子力学
作者
Juan Bisquert,Karl Cedric Gonzales,Antonio Guerrero
标识
DOI:10.1021/acs.jpcc.3c04672
摘要
Solution-processed photodetectors such as those based on halide perovskite semiconductors show attractive properties for emerging applications in lightweight, transparent, flexible, and spectrally selective optical sensors. The transient photocurrent to a light perturbation often shows a complex response characterized by sharp transient peaks in the photocurrent curves when the stimulus changes or slow rise times depending on features such as the applied voltage or the active layer thickness. We present the characteristic response of halide perovskite photodetectors by measuring the response of a FTO/PEDOT/MAPbBr3/Au device, and we establish a new model for the analysis of the dominant transient shapes. The model uses very basic suppositions of photoconversion to electricity: charge generation, collection, and polarization. These standard properties are combined with a new essential feature: a delayed photocurrent mode that forms a photoinduced chemical inductor. This last property is caused by ionic–electronic interaction phenomena related to the well-known inverted hysteresis of perovskite devices. We show that these elementary properties explain well the varied characteristic time transient currents in on/off voltages and light switching.
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